プロの高周波基板、高速基板、ICパッケージ基板、半導体テスト基板、HDI基板、リジットフレッキ基板、PCB設計とPCB メーカー
f4bt- 1/2は、科学的な配合と厳格なプロセスによってガラス繊維で補強された、微小分散のテフロン系複合材料です。従来のテフロン銅覆板に比べて誘電率が高く,回路の小型化の設計・製造に対応できる。f4bt- 1/2はセラミック粉を充填することでz軸の熱膨張係数を低くし、めっき孔の信頼性を高めています。また,熱伝導性が高いため,装置の放熱にもよい。
技術仕様:
Appearance | Meet the specification requirements for microwave PCB baseplate by National and Military Standards. | |||||||||||
Types | F4BT294 | F4BT600 | ||||||||||
Dielectric Constant | 2.94 | 6.0 | ||||||||||
Dimension（mm） | 500×600 430×430 | |||||||||||
Thickness and Tolerance（mm） | Plate thickness | 0.25 | 0.5 | 0.8 | 1.0 | |||||||
Tolerance | ±0.02～±0.04 | |||||||||||
Plate thickness | 1.5 | 2.0 | 3.0 | 4.0 | ||||||||
Tolerance | ±0.05～±0.07 | |||||||||||
Plate thickness includes the copper thickness. For special dimension，customized laminates is available | ||||||||||||
Mechanical Strength | Warp | Plate thickness（mm） | Maximum Warp | |||||||||
Single side | Double side | |||||||||||
0.25～0.5 | 0.050 | 0.025 | ||||||||||
0.8～1.0 | 0.030 | 0.020 | ||||||||||
1.5～2.0 | 0.025 | 0.015 | ||||||||||
3.0 | 0.02 | 0.010 | ||||||||||
Cutting/punching Strength | Thickness < 1mm，no burrs after cutting，minimum space between two punching holes is 0.55mm，no delamination. | |||||||||||
Thickness > 1mm，no burrs after cutting，minimum space between two punching holes is 1.10mm，no delamination. | ||||||||||||
Peel strength | Normal state：≥17N/cm，After thermal stress：≥14 N/cm | |||||||||||
Chemical Property | According to different properties of baseplates，the chemical etching method for PCB can be used. The dielectric properties of baseplates are not changed. The plating through hole can be done. The Hot Air Level temperature can not be higher than 263℃，and can not repeated. | |||||||||||
Electrical Property | Name | Test condition | Unit | Value | ||||||||
Density | Normal state | g/ cm3 | 2.3～2.6 | |||||||||
Moisture Absorption | Dip in the distilled water of 20±2℃ for24 hours | % | ≤0.02 | |||||||||
Operating Temperature | High-low temperature chamber | ℃ | -50℃～+260℃ | |||||||||
Thermal Conductivity | W/m/k | 0.4 | ||||||||||
CTE | 0～100℃ | ppm/℃ | 20（x） | |||||||||
25（y） | ||||||||||||
140（z） | ||||||||||||
Shrinkage Factor | 2 hours in boiling water | % | 0.0002 | |||||||||
Surface Resistivity | M·Ω | ≥1×104 | ||||||||||
Volume Resistivity | Normal state | MΩ.cm | ≥1×105 | |||||||||
Constant humidity and temperature | ≥1×104 | |||||||||||
Pin Resistance | 500VDC | Normal state | MΩ | ≥1×105 | ||||||||
Constant humidity and temperature | ≥1×104 | |||||||||||
Dielectric Breakdown | kv | ≥20 | ||||||||||
Dielectric Constant | 10GHZ | εr | 2.94，6.0（±2%） | |||||||||
Dissipation Factor | 10GHZ | tgδ | ≤1×10-3 | |||||||||
