f4bme-2-aは輸入品のテフロン樹脂編みガラス布とナノセラミックス膜フィラーを科学的なレシピと厳格なプロセスフローで舗装したものである。低粗さ銅箔を採用。電気性能や表面絶縁抵抗の安定性でf4bmシリーズを上回る。相互変調指数はf4bmeより-1/2高い。
技術仕様:
Appearance | Meet the specification requirements for the laminate of microwave PCB by National and Military Standards. | |||||||||||||||
Types | F4BME-2-A255 | F4BME-2-A262 | F4BME-2-A275 | F4BME-2-A285 | F4BME-2-A294 | F4BME-2-A300 | ||||||||||
Dimension(mm) | 550×440 | 500×500 | 600×500 | 650×500 | ||||||||||||
1000×850 | 1100×1000 | 1220×1000 | 1500×1000 | |||||||||||||
For special dimension,customized laminates is available. | ||||||||||||||||
Thickness and Tolerance(mm) | Laminate thickness | 0.254 | 0.508 | 0.762 | 0.787 | 1.016 | ||||||||||
Tolerance | ±0.025 | ±0.05 | ±0.05 | ±0.05 | ±0.05 | |||||||||||
Laminate thickness | 1.27 | 1.524 | 2.0 | 3.0 | 4.0 | |||||||||||
Tolerance | ±0.05 | ±0.05 | ±0.075 | ±0.09 | ±0.1 | |||||||||||
Laminate thickness | 5.0 | 6.0 | 9.0 | 10.0 | 12.0 | |||||||||||
Tolerance | ±0.1 | ±0.12 | ±0.18 | ±0.18 | ±0.20 | |||||||||||
Mechanical Strength | Cutting/punching Strength | Thickness1mm,no burrs after cutting,minimum space between two punching holes is 0.55mm,no delamination. | ||||||||||||||
Thickness1mm,no burrs after cutting,minimum space between two punching holes is 1.10mm,no delamination. | ||||||||||||||||
Peel strength(1oz copper) | Normal state:≥14N/cm;No bubble、delamination、peel strength≥12N/cm(in the constant humidity and temperature、and keep in the melting solder of 265℃±2℃ for 20 seconds). | |||||||||||||||
Chemical Property | According to the properties of laminate,the chemical etching method for PCB can be used. The dielectric properties of laminate are not changed. The plating through hole can be done,but the sodium treatment or the plasma treatment must be used. | |||||||||||||||
Electrical Property | Name | Test condition | Unit | Value | ||||||||||||
Density | Normal state | g/ cm3 | 2.1~2.35 | |||||||||||||
Moisture Absorption | Dip in the distilled water of 20±2℃ for24 hours | % | ≤0.07 | |||||||||||||
Operating Temperature | High-low temperature chamber | ℃ | -50℃~+260℃ | |||||||||||||
Thermal Conductivity | W/m/k | 0.45~0.55 | ||||||||||||||
CTE (typical) | -55~288℃ (εr :2.5~2.9) | ppm/℃ | 16(x) | |||||||||||||
20(y) | ||||||||||||||||
170(z) | ||||||||||||||||
CTE (typical) | -55~288℃ (εr :2.9~3.0) | ppm/℃ | 12(x) | |||||||||||||
15(y) | ||||||||||||||||
90(z) | ||||||||||||||||
Shrinkage Factor | 2 hours in boiling water | % | 0.0002 | |||||||||||||
Surface Resistivity | 500V DC | Normal state | M·Ω | ≥4×105 | ||||||||||||
Constant humidity and temperature | ≥6×104 | |||||||||||||||
Volume Resistivity | Normal state | MΩ.cm | ≥6×106 | |||||||||||||
Constant humidity and temperature | ≥1×105 | |||||||||||||||
Surface dielectric strength | Normal state | d=1mm(Kv/mm) | ≥1.2 | |||||||||||||
Constant humidity and temperature | ≥1.1 | |||||||||||||||
Dielectric Constant | 10GHZ | εr | 2.55±0.05、2.62±0.05 2.75±0.05、2.85±0.05 2.94±0.05、3.0±0.05 | |||||||||||||
Thermal Coefficient ofεr (PPM/℃) -50150℃ | εr | Value | ||||||||||||||
2.55 | -100 | |||||||||||||||
2.62 | -90 | |||||||||||||||
2.75 | -90 | |||||||||||||||
2.85 | -85 | |||||||||||||||
2.94 | -85 | |||||||||||||||
3.0 | -75 | |||||||||||||||
Dissipation Factor | 10GHZ | tgδ | 2.552.85 | ≤1.5×10-3 | ||||||||||||
2.943.0 | ≤2.0×10-3 | |||||||||||||||
PIMD | 2.5 GHZ | dbc | -160 | |||||||||||||
UL Flammability Rating | 94 V-0 | |||||||||||||||
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